PCD3349 Просмотр технического описания (PDF) - Philips Electronics
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PCD3349 Datasheet PDF : 20 Pages
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Philips Semiconductors
8-bit microcontroller with DTMF generator
Product specification
PCD3349A
13 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); see note 1 and 2.
SYMBOL
PARAMETER
VDD
supply voltage
VI
all input voltages
II, IO
DC input or output current
Ptot
total power dissipation
PO
power dissipation per output
ISS
ground supply current
Tstg
storage temperature
Tj
operating junction temperature
MIN.
−0.5
−0.5
−10
−
−
−50
−65
−
MAX.
UNIT
+7.0
V
VDD + 0.5 V
+10
mA
125
mW
30
mW
+50
mA
+150
°C
90
°C
Notes
1. Stresses above those listed under Limiting Values may cause permanent damage to the device.
2. Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to
VSS unless otherwise noted.
14 HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices”).
15 DC CHARACTERISTICS
VDD = 1.8 to 6 V; VSS = 0 V; Tamb = −25 to +70 °C; all voltages with respect to VSS; fxtal = 3.58 MHz (gmL); unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (see Figs 5 to 9)
VDD
supply voltage
operating; note 1
RAM data retention in
Stop mode
1.8
−
6
V
1.0
−
6
V
IDD
IDD(idle)
IDD(stp)
operating supply current;
note 2
supply current Idle mode;
note 2
supply current Stop mode
VDD = 3 V; value HGF ≠ 0 and/or LGF ≠ 0 −
VDD = 3 V
−
VDD = 5 V; fxtal = 10 MHz (gmL)
−
VDD = 5 V; fxtal = 16 MHz (gmM)
−
VDD = 5 V; fxtal = 16 MHz (gmH)
−
VDD = 3 V; value HGF ≠ 0 and/or LGF ≠ 0 −
VDD = 3 V; value HGF = LGF = 0
−
VDD = 5 V; fxtal = 10 MHz (gmL)
−
VDD = 5 V; fxtal = 16 MHz (gmM)
−
VDD = 5 V; fxtal = 16 MHz (gmH)
−
VDD = 1.8 V; Tamb = 25 °C; note 3
−
VDD = 1.8 V; Tamb = 70 °C; note 3
−
0.9
1.8
mA
0.3
0.6
mA
1.1
3.0
mA
1.7
5.0
mA
2.5
6.0
mA
0.7
1.4
mA
0.2
0.4
mA
0.8
1.6
mA
1.2
4.0
mA
1.7
5.0
mA
1.0
2.5
µA
−
10
µA
1998 May 11
10
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