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GS71116AGP

64K x 16 1Mb Asynchronous SRAM

Giga Semiconductor 

GS71116ATP/J/U

DC I/O Pin Characteristics

Parameter

Symbol

Test Conditions

Min

Max

Input Leakage Current

IIL

VIN = 0 to VDD

–1 uA

1uA

Output Leakage

Current

ILO

Output High Z

VOUT = 0 to VDD

–1 uA

1uA

Output High Voltage

VOH

IOH = –4 mA

2.4

Output Low Voltage

VOL

ILO = +4 mA

0.4V

Power Supply Currents

Parameter Symbol

Operating

Supply

IDD

Current

Standby

Current

ISB1

Standby

Current

ISB2

Test Conditions

CE ≤ VIL

All other inputs

≥ VIH or ≤ VIL

Min. cycle time

IOUT = 0 mA

CE ≥ VIH

All other inputs

≥ VIH or ≤VIL

Min. cycle time

CE ≥ VDD – 0.2 V

All other inputs

≥ VDD – 0.2 V or ≤ 0.2 V

0 to 70°C

–40 to 85°C

7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns

145 mA 125 mA 100 mA 85 mA 150 mA 130 mA 105 mA 90 mA

25 mA 20 mA 20 mA 15 mA 30 mA 25 mA 25 mA 20 mA

2 mA

5 mA

Rev: 1.07 12/2004

5/16

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2001, GSI Technology

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