P4C168 Просмотр технического описания (PDF) - Semiconductor Corporation

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P4C168

ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS

Semiconductor Corporation 

P4C168, P4C169, P4C170

TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)(5,6)

Notes:

5. WE is HIGH for READ cycle.

6. CE/CS and OE are LOW for READ cycle.

TIMING WAVEFORM OF READ CYCLE NO. 2 (CE/CS CONTROLLED)(5,7)

TIMING WAVEFORM OF READ CYCLE NO. 3—P4C170 ONLY (OE CONTROLLED)(5)

Notes:

7. ADDRESS must be valid prior to, or coincident with CE/CS transition

low. For Fast CS, tAA must still be met.

8. Transition is measured ±200mV from steady state voltage prior to

change, with loading as specified in Figure 1.

9. Read Cycle Time is measured from the last valid address to the first

transitioning address.

Document # SRAM107 REV A

Page 4 of 15

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