P4C150-12DC Просмотр технического описания (PDF) - Semiconductor Corporation
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P4C150-12DC Datasheet PDF : 11 Pages
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P4C150
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
Parameter
-10
Min Max
-12
-15
Min Max Min Max
-20
-25
-35
Min Max Min Max Min Max
Unit
tWC Write Cycle Time
10
12
15
20
25
35
ns
tCW Chip Enable Time to End of Write 8
10
11
13
15
20
ns
tAW Address Valid to End of Write
8
10
13
16
20
25
ns
tAS Address Set-up Time
0
1
1
1
2
2
ns
tWP Write Pulse Width
tAH
Address Hold Time from
End of Write
8
10
11
13
15
20
ns
0
1
1
1
2
2
ns
tDW Data Valid to End of Write
5
8
11
13
15
20
ns
tDH Data Hold Time
0
1
1
1
2
2
ns
tWZ Write Enable to Output in High Z
5
8
12
15
20
25 ns
tOW Output Active from End of Write 2
2
2
3
3
3
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(10)
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CS CONTROLLED)(10)
Notes:
10. CS and WE must be LOW for WRITE cycle.
11. If CS goes HIGH simultaneously with WE high, the output remains
in a high impedance state.
12. Write Cycle Time is measured from the last valid address to the first
transition address.
Document # SRAM105 REV A
Page 5 of 11
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