P4C1023L-55CJM Просмотр технического описания (PDF) - Semiconductor Corporation
Номер в каталоге
Компоненты Описание
Список матч
P4C1023L-55CJM Datasheet PDF : 11 Pages
| |||
P4C1023/P4C1023L
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
VIN = 0V
VOUT = 0V
Max
7
9
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Note 1
-55
-70
Unit
Commercial
20
20
ICC
Dynamic Operating Current Industrial
Military
25
25
mA
35
35
Note 1 - Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
tRC Read Cycle Time
-55
Min
Max
-70
Min
Max
Unit
55
70
ns
tAA Address Access Time
55
70
ns
tAC
Chip Enable Access
Time
tOH
Output Hold from
Address Change
tLZ
Chip Enable to
Output in Low Z
55
70
ns
5
5
ns
10
10
ns
tHZ
Chip Disable to
Output in High Z
20
25
ns
tOE
Output Enable Low
to Data Valid
30
tOLZ
Output Enable Low to
Low Z
5
5
tOHZ
Output Enable High
to High Z
20
tPU
Chip Enable to Power
Up Time
0
0
35
ns
ns
25
ns
ns
tPD
Chip Disable to
Power Down Time
55
70
ns
Document # SRAM126 REV OR
Page 3 of 11
Share Link: 