EM565161 Просмотр технического описания (PDF) - Etron Technology

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EM565161

512K x 16 Low Power SRAM

Etron Technology 

Et r onT ec h

Data Retention Characteristics (Ta = -40°C to 85°C)

Symbol

Parameter

CE1# ≥ VDD – 0.2V

VDR

Data Retention Supply

Voltage

or UB# = LB# ≥ VDD – 0.2V

or CE2 ≤ 0.2V,

VIN ≥ VDD – 0.2V or VIN ≤ 0.2V

tSDR Chip Deselect to Data Retention Mode Time

tRDR Recovery Time

CE1# or UB#/LB# Controlled Data Retention Mode

tS D R

Data Retention Mode

VDD

2 .7 V

2 .2 V

VDR

CE1#,

U B # /L B #

GND

Note 1

CE2 Controlled Data Retention Mode

VDD

2.7V

CE2

tSDR

Data Retention Mode

VDR

0.4V

GND

Note 2

Note:

1. CE1# ≥ VDD – 0.2V or UB# = LB# ≥ VDD – 0.2V

2. CE2 ≤ 0.2V

EM565161

Min

Typ Max Unit

1.0

− 3.6 V

0

tRC

tR D R

− − ns

− − ns

tRDR

Preliminary

11

Rev 0.9

Jan 2002

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