BS616UV8020BI-10 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616UV8020BI-10
Brilliance Semiconductor
BS616UV8020BI-10 Datasheet PDF : 11 Pages
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BSI
BS616UV8020
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
VIL
Guaranteed Input Low
Voltage(2)
VIH
Guaranteed Input High
Voltage(2)
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
Vcc=2V
Vcc=3V
Vcc=2V
Vcc=3V
IOL
Output Leakage Current
Vcc = Max, CE1 = VIH , or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc= max, IOL = 1mA
VOH
Output High Voltage
Vcc= Min, IOH = -0.5mA
Vcc=2V
Vcc=3V
Vcc=2V
Vcc=3V
ICC
Operating Power Supply Vcc=max, CE1=VIL and
Current
CE2= VIH,IDQ = 0mA, F = Fmax(3)
Vcc=2V
Vcc=3V
ICCSB
Standby Current-TTL
Vcc= max, CE1=VIH or CE2 = VIL,
IDQ = 0mA
Vcc=2V
Vcc=3V
ICCSB1
Standby Current-CMOS
Vcc= max,CE1ЊVcc-0.2V, or
CE2Љ0.2V; VIN Њ Vcc - 0.2V
or VIN Љ 0.2V
Vcc=2V
Vcc=3V
MIN. TYP. (1) MAX.
-0.5
--
0.6
-0.5
--
0.8
1.4
--
Vcc+0.2
2.0
--
Vcc+0.2
--
--
1
UNITS
V
V
uA
--
--
1
uA
--
--
0.4
--
--
0.4
V
1.6
--
--
2.4
--
--
V
--
--
15
mA
--
--
20
--
--
0.6
mA
--
--
1
--
0.4
2
uA
--
0.5
3
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/ tRC .
R0201-BS616UV8020
4
Revision 2.4
April 2002
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