NX5504(2006) Просмотр технического описания (PDF) - California Eastern Laboratories.

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NX5504
(Rev.:2006)

1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories. 

NX5504 Series

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Parameter

Operating Voltage

Threshold Current

Threshold Output Power

Differential Efficiency

Temperature Dependence of

Differential Efficiency

Center Wavelength

Temperature Dependence of Center

Wavelength

Spectral Width

Rise Time

Fall Time

Monitor Current

Monitor Dark Current

Monitor PD Terminal Capacitance

Tracking Error*1

Symbol

Conditions

Vop Po = 5.0 mW, TC = −40 to +85°C

Ith

TC = 85°C

Pth TC = −40 to +85°C, IF = Ith

ηd

∆ηd

∆ηd = 10 log ηd (@ 85°C)

ηd (@ 25°C)

λC Po = 5.0 mW, RMS (−20 dB)

TC = −40 to +85°C

∆λ/∆T TC = −40 to +85°C

σ

Po = 5.0 mW, RMS (−20 dB)

TC = −40 to +85°C

tr

10-90%

tf

90-10%

Im

VR = 5 V, Po = 5.0 mW

ID

VR = 5 V

VR = 5 V, TC = −40 to +85°C

Ct VR = 5 V, f = 1 MHz

γ

Im = const. (@ Po = 5.0 mW, TC = 25°C)

TC = −40 to +85°C

MIN.

0.15

−3.0

1 480

200

−1.0

TYP.

1.1

8

20

100

0.3

−1.5

0.5

1.5

0.1

6

MAX. Unit

1.5

V

20

mA

40

200

µW

W/A

dB

1 580

nm

nm/°C

3.0

nm

0.7

ns

0.7

ns

µA

10

nA

500

20

pF

1.0

dB

*1 Tracking Error: γ

Po

(mW)

5.0

Po

TC = 25˚C

γ = 10 log Po [dB]

5.0

TC = –40 to +85˚C

0

Im

Im (mA)

Data Sheet PL10435EJ04V0DS

5

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