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NTE7138

Integrated Circuit Advanced Monitor Video Controller for OSD

NTE Electronics 

Electrical Characteristics (Cont’d): (VP = 8V, TA = +25°C, Note 3, Note 4 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gain Control (Channel 1 and Channel 3, Note 10)

Input Voltage

Input Voltage for Nominal Gain

Vi(GC)

Pin3, Pin11 Open Circuit

1.0 – 6.0 V

3.6 3.75 3.95 V

Input Resistance

Gain Control Difference Relative to

Nominal Gain (Channels 1 and 3 Only)

Ri(GC)

∆G

Feedback Input (Channels 1, 2 and 3, Note 11)

Vi(CC) = 4.3V, Vi(GC) = 6V

Vi(CC) = 4.3V, Vi(GC) = 1V

44 55 66 kΩ

2.0 2.6 3.3 dB

–5.5 –5.0 –4.5 dB

Internal Reference Voltage

Maximum Output Current

Black–Level Variation at CRT

Variation of Vref(int) in the Temperature

Range

Vref(int)

Io(FB)

∆Vbl(CRT)

∆Vref(T)

During Output Clamping,

Vi(FB) = 3V

Note 12

TA = –20° to +70°C

5.6 5.8 6.1 V

–500 –100 –60 nA

0 40 200 mV

0 20 50 mV

Variation of Vref(int) with Supply Voltage

Voltage Outputs (Channels 1, 2 and 3)

∆Vref(int)(VP) 7.2V ≤ VP ≤ 8.8V

0 60 100 mV

Nominal Signal Output Voltage

(Black–to–White Value)

Vo(b–w) Pin3 and Pin11 Open–Circuit, 0.69 0.79 0.89 V

Vi(CC) = 4.3V, Vi(b–w) = 0.7V

Maximum Adjustable Black–Level Voltage Vblx(max) During Output Clamping,

TA = –20° to +70°C

1.0 1.2 1.4 V

Black–Level Voltage During Switch–Off,

Equal to Minimum Adjustable

Black–Level Voltage

Vbl(SO)

Vi(HBL) = VP, RO = 33Ω,

TA = –20° to +70°C

30 45 100 mV

Black–Level Voltage During Test Mode

Signal–to–Noise Ratio

Vbl(TST)

S/N

Vi(HBL) = VP, Vi(CL) = VP,

Pin1 Open–Circuit,

Vi = Vi(clamp), Note 13

Note 14

0.3 0.7 1.2 V

– 50 44 dB

Output Thermal Distortion

Blacl–Level Variation Between

Clamping Pulses

dO(th)

∆Vbl(fl)

Io(b–w) = 50mA, Note 15

Line frequency 30kHz

– 0.6 1.0 %

– 0.5 4.5 mV

Maximum Offset During Sync Clipping

Voffset(max) Vl < Vl(clamp), Note 16

0

7 15 mV

Variation of Nominal Output Signal

(Black–to–White Value) with

Temperature

∆Vo(b–w)(T) Pin3 and Pin11 Open–Circuit, 0

2.5 10

%

Vi(CC) = 4.3V, Vi(b–w) = 0.7V,

TA = –20° to +70°C

Current Outputs (Channels 1, 2 and 3, Note 17)

Output Current (Black–to–White Value)

Io(b–w)

With Peaking

– 50 – mA

–

– 100 mA

Start of HF–Saturation Voltage of

Output Transistors

V20–19,

V17–16,

V14–13

Output Current During Switch–Off

Ibl(SO)

Frequency Response at Voltage Outputs (Note 18)

Io = 50mA

Io = 100mA

Vi(HBL) = VP, RO = 33Ω

–

– 2.0 V

–

– 2.2 V

0 20 900 µA

Gain Decrease by Frequency Response

Rise Time at Voltage Output

∆G(f)

tr(O)

70MHz, Single Channel

10% to 90% Amplitude,

Input Rise Time = 1ns

– 1.3 3.0 dB

– 4.1 5.0 ns

Overshoot of Output Signal Pulse Related

dVO

Single Channel,

to Actual Output Pulse Amplitude

Input Rise Time = 2.5ns,

–

4

8

%

Vi(b–w) = 0.7V, Vi(CC) = 4.3V,

Pin3 and Pin11 Open–Circuit

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