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NTE3043

Optoisolator NPN Transistor Output

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Input LED

Reverse Leakage Current

Forward Voltage

Reverse Breakdown Voltage

Forward Voltage Temperature Coefficient

IR

VR = 3V

VF IF = 20mA

VR IR = 10µA

Junction Capacitance

Output Transistor

CJ VF = 0, f = 1MHz

VF = 1V, f = 1MHz

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Dark Current

DC Current Gain

Collector–Emitter Capacitance

Collector–Base Capacitance

Emitter–Base Capacitance

Coupled

V(BR)CEO IC = 1mA, IF = 0

V(BR)EBO IE = 100µA, IF = 0

V(BR)CBO IC = 10µA

ICEO VCE = 10V, IF = 0

hFE VCE = 6V, IC = 100µA

VCE = 0, f = 1MHz

VCE = 5V, f = 1MHz

VEB = 0, f = 1MHz

DC Current Transfer Ratio

Current Transfer Ratio, Collector–Base

Input–Output Isolation Resistance

Collector–Emitter Saturation Voltage

Input–Output Capacitance

Surge Isolation

IC/IF

RIO

VCE(sat)

CIO

IF = 10mA, VCE = 10V

IF = 16mA, VCE = 0.4V

IF = 10mA, VCB = 10V

VISO = 500VDC

IF = 16mA, IC = 2mA

f = 1MHz

Relative Humidity < 50%,

I1–0 < 10µb

t = 1sec

Steady State Isolation

Relative Humidity < 50%

t = 1min

Switching Times

Non–Saturated Turn–On Time

Non–Saturated Turn–Off Time

Saturated Turn–On Time

Saturated Turn–Off Time

ton RL = 100, IC = 200mA, VCC = 5V

toff

ton RL = 1.9kΩ, IF = 16mA

toff

Min Typ Max Unit

–

– 10 µA

–

– 1.5

V

3.0 –

–

V

– –1.8 – mV/°C

– 50 –

pF

– 65 –

pF

80 –

–

V

5

–

–

V

100 –

–

V

–

– 60 nA

– 170 –

–

8

–

pF

– 20 –

pF

– 10 –

pF

70 125 210 %

– 12.5 –

%

– 0.15 –

%

10 –

–

Ω

–

– 0.4

V

– 0.5 –

pF

4000 –

–

VDC

3000 –

3500 –

2500 –

–

VAC

–

VDC

–

VAC

– 4.5 15 µs

– 3.5 15 µs

– 3.2 –

µs

– 50 –

µs

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