Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Drain–Source Breakdown Voltage
V(BR)DSS VGS = 0, ID = 0.25mA
100
Zero Gate Voltage Drain Current
IDSS VDS = 100V, VGS = 0
–
VDS = 80V, VGS = 0, TJ = +125°C
–
Gate–Body Leakage Current, Forward IGSS VGS = 20V
–
Gate–Body Leakage Current, Reverse IGSS VGS = 20V
–
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 0.25mA
2.0
Static Drain–Source On–Resistance
rDS(on) VGS = 10V, ID = 5.3A, Note 2
–
Forward Transconductance
gFS VDS ≤ 50V, ID = 5.3A, Note 2
2.0
Input Capacitance
Ciss VDS = 25V, VGS = 0, f = 1MHz
–
Output Capacitance
Coss
–
Reverse Transfer Capacitance
Crss
–
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
td(on) VDD = 50V, ID = 10.5A, ZO = 24Ω, –
tr
MOSFET switching times are
essentially independent of operating
–
td(off) temperature
–
Fall Time
tf
–
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Qg VGS = 10V, VDS = 80V, ID = 10.5A, –
Qgs
Gate charge is essentially
independent of operating
–
Qgd temperature
–
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
–
(Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
ISM Note 3
–
VSD TJ = +25°C, IS = 10.5A, VGS = 0V, –
Note 2
Reverse Recovery Time
trr
TJ = +25°C, IF = 10.5A,
–
dIF/dt = 100A/µs
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Typ Max Unit
–
–
V
– 0.25 mA
– 1.0 mA
– 100 nA
– –100 nA
– 4.0 V
– 0.3 Ω
–
– mhos
835 – pF
357 – pF
94 – pF
– 60 ns
– 140 ns
– 140 ns
– 140 ns
– 58 nC
12.6 – nC
16.6 – ns
– 10.5 A
– 42 A
– 6.3 V
– 300 ns