NGD15N41CLT4 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

NGD15N41CLT4

Ignition IGBT 15 Amps, 410 Volts

ON Semiconductor 

NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic

Symbol

Value

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C

THERMAL CHARACTERISTICS

EAS

250

200

Characteristic

Symbol

Value

Thermal Resistance, Junction to Case

RθJC

1.4

Thermal Resistance, Junction to Ambient

DPAK (Note 1)

RθJA

100

D2PAK (Note 1)

RθJA

50

TO−220

RθJA

62.5

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

TL

275

Unit

mJ

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

BVCES

IC = 2.0 mA

IC = 10 mA

TJ = −40°C to 380 410 440 VDC

150°C

TJ = −40°C to 380 410 440

150°C

Zero Gate Voltage Collector Current

ICES

Reverse Collector−Emitter Leakage Current

IECS

Reverse Collector−Emitter Clamp Voltage

BVCES(R)

Gate−Emitter Clamp Voltage

BVGES

VCE = 350 V,

VGE = 0 V

VCE = −24 V

IC = −75 mA

IG = 5.0 mA

TJ = 25°C

−

TJ = 150°C

−

TJ = −40°C

−

TJ = 25°C

−

TJ = 150°C

−

TJ = −40°C

−

TJ = 25°C

27

TJ = 150°C 30

TJ = −40°C 25

TJ = −40°C to 11

150°C

2.0 20 µADC

10 40*

1.0 10

0.7 2.0 mA

12 25*

0.1 1.0

33

37

VDC

36 40

31 35

13

15

VDC

Gate−Emitter Leakage Current

IGES

VGE = 10 V

TJ = −40°C to 384 640 1000 µADC

150°C

Gate Resistor (Optional)

RG

−

TJ = −40°C to −

70

−

Ω

150°C

Gate Emitter Resistor

RGE

−

TJ = −40°C to 10 16 26

kΩ

150°C

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGE(th)

IC = 1.0 mA,

VGE = VCE

TJ = 25°C

1.1 1.4 1.9 VDC

TJ = 150°C 0.75 1.0 1.4

TJ = −40°C 1.2 1.6 2.1*

Threshold Temperature Coefficient

−

−

(Negative)

−

−

3.4

− mV/°C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.

*Maximum Value of Characteristic across Temperature Range.

http://onsemi.com

2

Share Link: