NE851M33 Просмотр технического описания (PDF) - California Eastern Laboratories.

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NE851M33

NEC's NPN SILICON TRANSISTOR

California Eastern Laboratories. 

NE851M33

ELECTRICAL CHARACTERISTICS (TA =+25ºC)

PARAMETER

SYMBOL

TEST CONDITIONS

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure

Reverse Transfer Capacitance

ICBO

IEBO

hFE Note 1

VCB = 5 V, IE = 0 mA

VEB = 1 V, IC = 0 mA

VCE = 1 V, IC = 5 mA

fT

fT

|S21e|2

|S21e|2

NF

Cre Note 2

VCE = 1 V, IC = 5 mA, f = 2 GHz

VCE = 1 V, IC = 15 mA, f = 2 GHz

VCE = 1 V, IC = 5 mA, f = 2 GHz

VCE = 1 V, IC = 15 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

VCB = 0.5 V, IC = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

MIN.

TYP. MAX. UNIT

–

–

600

nA

–

–

600

nA

100

120

145

–

3.0

4.5

–

GHz

5.0

6.5

–

GHz

3.0

4.0

–

dB

4.5

5.5

–

dB

–

1.9

2.5

dB

–

0.6

0.8

pF

hFE CLASSIFICATION

RANK

Marking

hFE Value

FB

E7

100 to 145

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