NE851M03 Просмотр технического описания (PDF) - California Eastern Laboratories.
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NE851M03 Datasheet PDF : 10 Pages
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NEC's NPN SILICON TRANSISTOR NE851M03
FEATURES
• NEW MINIATURE M03 PACKAGE:
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
• IDEAL FOR ≤ 3 GHz OSCILLATORS
• LOW 1/f NOISE
• LOW PUSHING FACTOR
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator appli-
cations up to 3 GHz. The NE851M03 features low voltage
operation, low phase noise, and high immunty to pushing ef-
fects. NEC's low profile/flat lead style "M03" package is ideal
for today's portable wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
3
1
0.2+-00.1
0.3
+0.1
-0
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
fT
|S21E|2
|S21E|2
NF
CRE
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain2 at VCE = 1 V, IC = 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
UNITS
GHz
GHz
dB
dB
dB
pF
nA
nA
NE851M03
2SC5800
M03
MIN
TYP
MAX
3.0
4.5
–
5.0
6.5
3.0
4.0
–
4.5
5.5
–
–
1.9
2.5
–
0.6
0.8
–
–
600
–
–
600
100
120
145
California Eastern Laboratories
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