NE72118 Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE72118 Datasheet PDF : 4 Pages
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PRELIMINARY DATA SHEET
C TO X BAND AMPLIFIER
C TO X BAND OSC NE72118
N-CHANNEL GaAs MESFET
FEATURES
• HIGH POWER GAIN:
Gs = 5.5 dB TYP at f = 12 GHz
• GATE LENGTH: Lg = 0.8 µm (recessed gate)
• GATE WIDTH: Wg = 330 µm
• 4 PINS SUPER MINI MOLD
• TAPE & REEL PACKAGING
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 ± 0.2
1.25 ± 0.1
DESCRIPTION
The NE72118 is a high performance gallium arsenide metal
semiconductor field effect transistor (MESFET), housed in a
low cost plastic surface mount package (SOT 23 style). This
device's low phase noise and high fT make it an excellent
choice for oscillator applications on a digital LNB (Low Noise
Block).
NEC's stringent quality assurance and test procedures ensure
the highest reliability performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
IGSO
Gate to Source Leak Current at VGS = -5 V
µA
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0 V
µA
30
VGS (OFF) Gate to Source Cut off Voltage at VDS = 3 V, ID = 100 µA
V
-0.5
gm
Transconductance at VDS = 3 V, ID = 30 mA
mS
20
PN
Phase Noise at VDS=3 V, ID=30mA, f=11GHz,100KHz offset dBc/Hz
Phase Noise at VDS=3 V, ID=30mA, f=11GHz, 10KHz offset dBc/Hz
Gs
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz
dB
Po (1dB)
Output Power at 1 dB Gain Compression Point at
VCE = 3 V, ID = 30 mA, f = 12 GHz
dBm
NE72118
18
TYP
1.0
60
-2.0
40
-110
-85
5.5
13.5
MAX
10
100
-4.0
California Eastern Laboratories
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