NE71300N Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE71300N Datasheet PDF : 8 Pages
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NE71300
NE71300(N) NONLINEAR MODEL
SCHEMATIC
Q1
LG
GATE
0.36nH
LD
0.36nH
DRAIN
LS
0.02nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-1.04
RG
6
VTOSC
0
RD
2
ALPHA
4.5
RS
2
BETA
0.0409
RGMET
0
GAMMA
0.082
KF
0
GAMMADC
0.05
AF
1
Q
1.9
TNOM
27
DELTA
0.42
XTI
3
VBI
1
EG
1.43
IS
7.3e-12
VTOTC
0
N
1.2
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
6e-12
CDS
0.15e-12
RDB
2000
CBS
1e-9
CGSO
0.5e-12
CGDO
0.04e-12
DELTA1
0.3
DELTA2
0.2
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.5 to 20 GHz
Bias:
Date:
VDS = 2 V to 4 V, ID = 10 mA to 30 mA
2/10/97
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -9/98
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