NE570 Просмотр технического описания (PDF) - ON Semiconductor
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NE570 Datasheet PDF : 10 Pages
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PIN FUNCTION DESCRIPTION
Pin
Symbol
1
RECT CAP 1
2
RECT IN 1
3
DG CELL IN 1
4
GND
5
INV. IN 1
6
RES. R3 1
7
OUTPUT 1
8
THD TRIM 1
9
THD TRIM 2
10
OUTPUT 2
11
RES. R3 2
12
INV. IN 2
13
VCC
14
DG CELL IN 2
15
RECT IN 2
16
RECT CAP 2
NE570
Description
External Capacitor Pinout for Rectifier 1
Rectifier 1 Input
Variable Gain Cell 1 Input
Ground
Inverted Input 1
R3 Pinout 1
Output 1
Total Harmonic Distortion Trim 1
Total Harmonic Distortion Trim 2
Output 2
R3 Pinout 2
Inverted Input 2
Positive Power Supply
Variable Gain Cell 2 Input
Rectifier 2 Input
External Capacitor Pinout for Rectifier 2
ELECTRICAL CHARACTERISTICS VCC = +15 V, TA = 25 °C; unless otherwise stated.
Characteristic
Test Conditions
Symbol
Supply Voltage
VCC
Supply Current
No Signal
ICC
Output Current Capability
IOUT
Output Slew Rate
SR
Gain Cell Distortion (Note 1)
Untrimmed
Trimmed
Resistor Tolerance
Internal Reference Voltage
Output DC Shift (Note 2)
Untrimmed
Expandor Output Noise
No signal, 15 Hz to 20 kHz
(Note 3)
Unity Gain Level (Note 4)
Gain Change (Notes 1 and 5)
TA = 0°C to +70°C
Reference Drift (Note 5)
TA = 0°C to +70°C
Resistor Drift (Note 5)
TA = 0°C to +70°C
Tracking Error (measured relative to value at unity gain) Rectifier Input VCC = +6.0 V
equals [VO − VO (unity gain)] dB − V2 dBm
V2 = +6.0 dBm, V1 = 0 dB
V2 = −30 dBm, V1 = 0 dB
Channel Separation
1. Measured at 0 dBm, 1.0 kHz.
2. Expandor AC input change from no signal to 0 dBm.
3. Input to V1 and V2 grounded.
4. 0 dB = 775 mVRMS.
5. Relative to value at TA = 25°C.
Min
6.0
−
±20
−
−
−
−
1.7
−
−
−1.0
−
−
−
−
−
−
Typ
Max
−
24
4.3
4.8
−
−
±0.5
−
0.3
1.0
0.05
−
±5
±15
1.8
1.9
±90
±150
20
45
0
±0.1
±5.0
+8.0, −5.0
+1.0
±0.2
±10
−
±0.2
−
+0.2 −0.5, +1.0
60
−
Unit
V
mA
mA
V/ms
%
%
%
V
mV
mV
dBm
dB
mV
%
dB
dB
dB
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