NE5520379A Просмотр технического описания (PDF) - California Eastern Laboratories.

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NE5520379A

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories. 

APPLICATION CIRCUIT (900 MHz)

C3

C9

C11

P1

GND

VG

J3

VD

J4

C2

C8

C10

RFIN J1

C13

C12

C5

R1

C6 C7

C4

U1

C1

C14

RFOUT

J2

100637

NE55XXX79A-EV

SOURCE

LEAD ON DRAIN IS LARGER

GATE

DRAIN

VGG(+2.0 V)

NE5520379A

P.C.B. LAYOUT (Units in mm)

79A PACKAGE

4.0

1.7

Drain

Gate

Source

0.5

Through hole φ 0.2 × 33

0.5

6.1

Note:

Use rosin or other material to prevent solder from penetrating

through-holes.

VDD (+3.1 V)

+ 4.7uF 0.1uF 1000pF 100pF

RF Input

10pF

5KΩ

NE5520379A

8.2pF

18pF

18pF

+

100pF 1000pF 0.1uF 4.7uF

10pF

4.7pF

RF Output

NE5520379A PARTS LIST

1 TF-100637

TEST CIRCUIT BLK

16

4

2-56 X 3/16 PHILLIPS PAN HEAD

15

2 MA101J

C2, C3

CASE 1100 pF CAP MURATA

14

1 MCR03J512

R1

0603 5.1K OHMS RESISTOR ROHM

13

2 MCH185A180JK

C4, C7

0603 18 pF CAP ROHM

12

1 MCH185A4R7CK

C14

0603 4.7 pF CAP ROHM

11

2 MCH185A100DK

C1, C5

0603 10 pF CAP ROHM

10

1 MCH185A8R2DK

C6

0603 8.2 pF CAP ROHM

9

2 TAJB475K010R

C12, C13 CASE B 4.7 uF CAP ATC

8

2 GRM40X7R104K025BL C10, C11 0805 .1 uF CAP MURATA

7

2 GRM40C0G102J050BD C8, C9

0805 1000 pF CAP MURATA6

1 NE5520379A

U1

IC NEC, LD-MOS FET

5

1 703401

P1

GROUND LUG CONCORD

4

1 1250-003

J3, J4

FEEDTHRU MURATA

3

2 2052-5636-02

J1, J2

FLANGE MOUNT JACK RECEPTACLE

2

1 FD-100637

PCB

NE5520379A-EVAL FAB. DRAWING

1

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