NDP508AE Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDP508AE Datasheet PDF : 6 Pages
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Typical Electrical Characteristics
50
V GS = 20V
12
10
40
8.0
30
7.0
20
6.0
10
5.0
0
0
1
2
3
4
5
6
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8
VGS = 6V
1.6
1.4
1.2
1
7.0
8.0
10
12
20
0.8
0.6
0
10
20
30
40
50
60
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
ID = 9.5A
V GS = 10V
2
1.5
1
0.5
-50 -25
0
25
50
75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
2.5
TJ = 125°C
2
V = 10V
GS
1.5
25°C
1
-55°C
0.5
0
10
20
30
40
50
ID , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
20
VDS = 10V
15
TJ = -55°C 25
125
10
5
0
2
3
4
5
6
7
8
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
1.2
VDS= V GS
1.1
I D = 250µA
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDP508.SAM
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