NDP508AE Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NDP508AE Datasheet PDF : 6 Pages
| |||
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = 40 V, ID = 19 A,
VGS = 10 V, RGEN = 15 Ω
tD(OFF)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 64 V,
ID = 19 A, VGS = 10 V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
ALL
8.5 20 nS
ALL
66 110 nS
ALL
31 50 nS
ALL
48 80 nS
ALL
23.5 34 nC
ALL
4.5
nC
ALL
11.8
nC
IS
Maximum Continuos Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
19 A
NDP508B
NDP508BE
NDB508B
NDB508BE
17 A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
57 A
NDP508B
NDP508BE
NDB508B
NDB508BE
51 A
VSD
Drain-Source Diode Forward VGS = 0 V,
(Note 2) Voltage
IS = 9.5 A
ALL
TJ = 125°C
trr
Irr
Reverse Recovery Time
Reverse Recovery Current
VGS = 0 V, IS = 19 A,
dIS/dt = 100 A/µs
ALL
ALL
THERMAL CHARACTERISTICS
0.87 1.3 V
0.79 1.2 V
78 110 ns
5.2 75 A
RθJC
Thermal Resistance, Junction-to-Case
ALL
RθJA
Thermal Resistance, Junction-to-Ambient
ALL
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
2 °C/W
62.5 °C/W
NDP508.SAM
Share Link: 