NDP508AE Просмотр технического описания (PDF) - Fairchild Semiconductor

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NDP508AE

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TC = 25°C unless otherwise noted)

Symbol Parameter

Conditions

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

EAS

Single Pulse Drain-Source

VDD = 25 V, ID = 19 A

Avalanche Energy

IAR

Maximum Drain-Source Avalanche Current

Type Min Typ Max Units

NDP508AE

NDP508BE

NDB508AE

NDB508BE

55 mJ

19 A

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown

VGS = 0 V, ID = 250 µA

ALL

80

V

Voltage

IDSS

Zero Gate Voltage Drain

Current

VDS = 80 V,

VGS = 0 V

ALL

TJ = 125°C

IGSSF

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V

ALL

IGSSR

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V

ALL

ON CHARACTERISTICS (Note 2)

250 µA

1 mA

100 nA

-100 nA

VGS(th)

Gate Threshold Voltage

RDS(ON)

Static Drain-Source

On-Resistance

ID(on)

On-State Drain Current

VDS = VGS,

ID = 250 µA

ALL

TJ = 125°C

2 2.9 4

V

1.4 2.3 3.6 V

VGS = 10 V,

ID = 9.5 A

TJ = 125°C

NDP508A

NDP508AE

NDB508A

NDB508AE

0.057 0.08 Ω

0.097 0.16 Ω

VGS = 10 V,

ID = 8.5 A

TJ = 125°C

NDP508B

NDP508BE

NDB508B

NDB508BE

0.1 Ω

0.2 Ω

VGS = 10 V, VDS = 10 V

NDP508A 19

A

NDP508AE

NDB508A

NDB508AE

NDP508B 17

A

NDP508BE

NDB508B

NDB508BE

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

VDS = 10 V, ID = 9.5 A

ALL

6 9.6

S

Ciss

Input Capacitance

Coss

Output Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

ALL

750 900 pF

ALL

200 250 pF

ALL

60 90 pF

NDP508.SAM

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