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NCP693HMN25TCG(2009) Просмотр технического описания (PDF) - ON Semiconductor

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NCP693HMN25TCG
(Rev.:2009)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP693HMN25TCG Datasheet PDF : 12 Pages
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NCP693
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom) + 1.0 V, VCE = Vin, Cin = 2.2 mF, Cout = 2.2 mF, TA = 25°C,
unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (TA = 25°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
V
0.785
0.8
0.815
0.985
1.0
1.015
1.185
1.2
1.215
2.475
2.5
2.525
3.267
3.3
3.333
Output Voltage (TA = 40°C to 85°C, Iout = 10 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
V
0.760
0.8
0.827
0.960
1.0
1.027
1.160
1.2
1.227
2.435
2.5
2.545
3.214
3.3
3.359
Output Current
Input Voltage
Line Regulation (Vin = Vout + 1.0 V to 6.5 V, Iout = 10 mA)
Load Regulation (Iout = 1 mA to 300 mA, Vin = Vout + 2.0 V)
Load Regulation (Iout = 1 mA to 1 A, Vin = Vout + 2.0 V)
Supply Current (Iout = 0 A, Vin = 6.5 V)
Standby Current (VCE = 0 V, Vin = 6.5 V)
Short Current Limit (Vout = 0 V)
Output Voltage Temperature Coefficient
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Iout
Vin
1.6
Regline
Regload03
Regload1
Iss
Istby
Ish
Tc
VthCE
1.0
1
0.05
20
80
65
0.15
250
$100
A
6.5
V
0.1
%/V
40
mV
120
mV
90
mA
0.6
mA
mA
ppm/°C
V
0.4
Enable Pulldown Current
0.3
mA
Drop Output Voltage (TA = 25°C, Iout = 300 mA)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
VinVout
V
0.670
0.780
0.450
0.610
0.300
0.500
0.150
0.310
0.130
0.170
Drop Output Voltage (TA = 25°C, Iout = 1 A)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
VinVout
V
1.150
1.650
1.000
1.450
0.870
1.380
0.500
1.100
0.430
0.650
Ripple Rejection (Ripple 200 mVpp, Iout = 100 mA, f = 1 kHz)
PSRR
70
dB
Output Noise (BW = 10 Hz to 100 kHz, Iout = 1 mA)
Vnoise
45
mVrms
Thermal Shutdown Temperature/Hysteresis
Tshd/Hyst
165/30
°C
RDS(on) of additional output transistor (D version only)
RDS(on)
30
W
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
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