NCL30080ASNT1G Просмотр технического описания (PDF) - ON Semiconductor
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NCL30080ASNT1G Datasheet PDF : 24 Pages
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NCL30080
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V;
For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V)
Description
Test Condition
Symbol
Min Typ
ZERO VOLTAGE DETECTION CIRCUIT
ZCD threshold voltage
ZCD threshold voltage (Note 4)
ZCD hysteresis (Note 4)
Threshold voltage for output short circuit or aux. winding
short circuit detection
VZCD increasing
VZCD decreasing
VZCD(THI)
25
45
VZCD(THD)
5
25
VZCD(HYS)
10
–
VZCD(short)
0.8
1
Short circuit detection Timer
Auto−recovery timer duration
Input clamp voltage
High state
Low state
Propagation Delay from valley detection to DRV high
Equivalent time constant for ZCD input (Note 4)
Blanking delay after on−time
Timeout after last demag transition
CONSTANT CURRENT CONTROL
VZCD < VZCD(short)
Ipin1 = 3.0 mA
Ipin1 = −2.0 mA
VZCD decreasing
tOVLD
trecovery
VCH
VCL
tDEM
tPAR
tBLANK
tTIMO
70
90
3
4
–
9.5
−0.9 −0.6
–
–
–
20
2.25
3
5
6.5
Reference Voltage at Tj = 25°C
Reference Voltage Tj = −40°C to 125°C
Current sense lower threshold for detection of the
leakage inductance reset time
VREF
VREF
VCS(low)
245 250
242.5 250
30
55
LINE FEED−FORWARD
VVIN to ICS(offset) conversion ratio
Offset current maximum value
VALLEY SELECTION
VpinVIN = 4.5 V
KLFF
Ioffset(MAX)
15
17
67.5 76.5
Threshold for line range detection Vin increasing
(1st to 2nd valley transition for VREF > 0.75 V)
Threshold for line range detection Vin decreasing
(2nd to 1st valley transition for VREF > 0.75 V)
Blanking time for line range detection
THERMAL SHUTDOWN
VVIN increasing
VVIN decreasing
VHL
VLL
tHL(blank)
2.28 2.4
2.18 2.3
15
25
Thermal Shutdown (Note 4)
Thermal Shutdown Hysteresis (Note 4)
BROWN−OUT
Device switching
(FSW around 65 kHz)
TSHDN
130 155
TSHDN(HYS)
–
55
Brown−Out ON level (IC start pulsing)
Brown−Out OFF level (IC shuts down)
BO comparators delay
Brown−Out blanking time
Brown−Out pin bias current
4. Guaranteed by design
VSD increasing
VSD decreasing
VBO(on)
VBO(off)
tBO(delay)
tBO(blank)
IBO(bias)
0.90
1
0.85 0.9
–
30
35
50
−250 –
Max Unit
65 mV
45 mV
–
mV
1.2
V
110 ms
5
s
V
–
−0.3
150 ns
–
ns
3.75 ms
8
ms
255 mV
257.5 mV
80 mV
19 mA/V
85.5 mA
2.52 V
2.42 V
35 ms
170 °C
–
°C
1.10 V
0.95 V
–
ms
65 ms
250 nA
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