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MT4LC4M4B1DJ-6 Просмотр технического описания (PDF) - Micron Technology

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MT4LC4M4B1DJ-6
Micron
Micron Technology Micron
MT4LC4M4B1DJ-6 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
4 MEG x 4
FPM DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)]
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
Output buffer turn-off delay
OE# setup prior to RAS# during HIDDEN REFRESH cycle
FAST-PAGE-MODE READ or WRITE cycle time
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (2,048 cycles)
Refresh period (4,096 cycles)
SYMBOL
tAA
tAR
tASC
tASR
tAWD
tCAC
tCAH
tCAS
tCHD
tCHR
tCLZ
tCP
tCPA
tCRP
tCSH
tCSR
tCWD
tCWL
tDH
tDS
tOD
tOE
tOEH
tOFF
tORD
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
MIN
38
0
0
42
8
8
15
8
0
8
5
38
5
28
8
8
0
0
8
-5
MAX
25
13
10,000
28
12
12
0
12
0
20
47
50
9
9
50
10,000
50
125,000
100
84
11
0
0
32
64
MIN
45
0
0
49
10
10
15
10
0
10
5
45
5
35
10
10
0
0
10
-6
MAX
30
15
10,000
35
15
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
18
4
22
13
4
18
19
19
22
20
0
15
ns
0
ns
25
ns
56
ns
60
ns
12
ns
10
ns
60
10,000
ns
60
125,000 ns
100
µs
104
ns
14
ns
0
ns
0
ns
32
ms
64
ms
17, 22
15
14
16
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.

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