MT3S06T Просмотр технического описания (PDF) - Toshiba
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MT3S06T Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06T
MT3S06T
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
10
V
5
V
1.5
V
15
mA
7
mA
60
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
1
2007-11-01
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