MSS50-800 Просмотр технического описания (PDF) - Comset Semiconductors

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MSS50-800

BACK TO BACK SCR MODULE

Comset Semiconductors 

SEMICONDUCTORS

MSS40 / MSS50 Series

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

IT(RMS)

ITSM

I2t

Dl/dt

IGM

PG(AV)

Tj

Tstg

VRGM

RMS on-state current

TC = 80 °C

TC = 85 °C

Non repetitive surge

peak on-state current

I2t Value for fusing

tp = 16.7ms

tp = 20ms

Tj = 25 °C

tp = 10ms Tj = 25 °C

Critical rate of rise of on-

state current

IG = 2xIGT, tr ≤ 100ns

F = 120Hz Tj = 125 °C

Peak gate current

tp = 20µs Tj = 125 °C

Average gate power dissipation

Tj = 125 °C

Operating junction temperature range

Storage junction temperature range

Maximum peak reverse gate voltage

Value

MSS40

55

-

420

400

800

MSS50

-

70

630

600

1800

50

4

1

-40 to +125

-40 to +150

5

Unit

A

A

A2s

A/µs

A

W

°C

V

THERMAL CHARACTERISTICS

Symbol

Ratings

Rth(j-c)

Junction to case (AC)

MSS40

MSS50

Value

0.6

0.45

Unit

°C/W

29/10/2012

COMSET SEMICONDUCTORS

2|4

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