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MSM56V16800D

2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

Oki Electric Industry 

E2G1047-18-25

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MSM56V16800D/DH

2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM,

fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

inputs and outputs are LVTTL compatible.

FEATURES

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell

• 2-bank ¥ 1,048,576-word ¥ 8-bit configuration

• 3.3 V power supply, ±0.3 V tolerance

• Input : LVTTL compatible

• Output : LVTTL compatible

• Refresh : 4096 cycles/64 ms

• Programmable data transfer mode

– CAS latency (1, 2, 3)

– CAS latency (2, 3)*1

– Burst length (1, 2, 4, 8, full page)

– Burst length (1, 2, 4, 8)*1

– Data scramble (sequential, interleave)

*1 : H version only.

• CBR auto-refresh, Self-refresh capability

• Package:

44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800D/DH-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM56V16800D-10

MSM56V16800D-12

MSM56V16800DH-15

Max.

Frequency

100 MHz

83 MHz

66 MHz

Access Time (Max.)

tAC2

9 ns

tAC3

9 ns

14 ns

10 ns

9 ns

9 ns

1/30

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