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MSM51V4400E-10

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

Oki Electric Industry 

FEDD51V4400E-01

MSM51V4400E

DC Characteristics

(Vcc = 3.3V ± 0.3V, Ta = − 10°C to 70°C)

Parameter

Output High Voltage

Output Low Voltage

Input Leakage Current

Symbol

Condition

VOH

VOL

IOH = −2.0mA

IOL = 2.0mA

MSM51V4400

E-70

Min. Max.

2.4

VCC

0

0.4

0V ≤ VI ≤ VCC+0.3V;

ILI All other pins not

-10

10

under test = 0V

MSM51V4400

E-10

Min. Max.

2.4

VCC

0

0.4

-10

10

Unit Note

V

V

µA

Output Leakage Current

DQ disable

ILO

0V ≤ VO ≤ VCC

-10

10

-10

10 µA

Average Power Supply

Current

(Operating)

RAS, CAS cycling,

ICC1 tRC = Min.



65



55 mA 1, 2

Power Supply Current

(Standby)

ICC2

Average Power Supply

Current

ICC3

(RAS-only Refresh)

Power Supply Current

(Standby)

ICC5

Average Power Supply

Current

ICC6

(CAS before RAS Refresh)

RAS, CAS = VIH

RAS, CAS

≥ VCC −0.2V

RAS cycling,

CAS = VIH,

tRC = Min.

RAS = VIH,

CAS = VIL,

DQ = enable

RAS = cycling,

CAS before RAS



2



2

mA 1



0.5



0.5



65



55 mA 1, 2



2



2 mA 1



65



55 mA 1, 2

Average Power Supply

Current

(Fast Page Mode)

RAS = VIL,

ICC7 CAS cycling,

tPC = Min.



50



40 mA 1, 3

Notes: 1.

2.

3.

ICC Max. is specified as ICC for output open condition.

The address can be changed once or less while RAS = VIL.

The address can be changed once or less while CAS = VIH.

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