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MSM514102D

4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

Oki Electric Industry 

E2G0149-29-41

¡ ¡ SemicondSucetormiconductor

MSM514102D/DL

This veMrsiSoMn:51A4p1r0. 21D99/9DL

4,194,304-Word ¥ 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION

The MSM514102D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate

CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and

low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/

single-layer metal CMOS process. The MSM514102D/DL is available in a 26/20-pin plastic SOJ, 20-

pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514102DL (the low-power version) is specially

designed for lower-power applications.

FEATURES

• 4,194,304-word ¥ 1-bit configuration

• Single 5 V power supply, ±10% tolerance

• Input : TTL compatible, low input capacitance

• Output : TTL compatible, 3-state

• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)

• Static Column mode, read modify write capability

• CS before RAS refresh, hidden refresh, RAS-only refresh capability

• Multi-bit test mode capability

• Package options:

26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514102D/DL-xxSJ)

20-pin 400 mil plastic ZIP

(ZIP20-P-400-1.27)

(Product : MSM514102D/DL-xxZS)

26/20-pin 300 mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM514102D/DL-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM514102D/DL-60

MSM514102D/DL-70

MSM514102D/DL-80

Access Time (Max.)

tRAC

tAA

tCAC

60 ns 30 ns 15 ns

70 ns 35 ns 20 ns

80 ns 40 ns 20 ns

Cycle Time

Power Dissipation

(Min.) Operating (Max.) Standby (Max.)

110 ns

130 ns

150 ns

495 mW

440 mW

385 mW

5.5 mW/

1.1 mW (L-version)

1/17

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