MS1503 Просмотр технического описания (PDF) - Advanced Power Technology
Номер в каталоге
Компоненты Описание
Список матч
MS1503 Datasheet PDF : 3 Pages
| |||
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
WIDE BAND VHF/UHF APPLICATIONS
Features
• 400 MHz
• 28 VOLTS
• GOLD METALIZATION
• POUT = 100 WATTS
• GP = 7.0 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1503 is a 28V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. The
device utilizes diffused emitter resistors to achieve infinite
VSWR capability under operating conditions. Internal inpedance
matching produces optimum power gain and efficiency over the
225-400MHz band.
MS1503
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
33
4.0
4.0
250
+200
-65 +150
Unit
V
V
V
A
W
°C
°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.7
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Share Link: 