MS1006 Просмотр технического описания (PDF) - Advanced Power Technology

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MS1006

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Advanced Power Technology  

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

Symbol

Test Conditions

BVCES

BVCEO

BVEBO

hFE

IC = 100 mA

IC = 200 mA

IE = 10 mA

VCE = 6 V

VBE = 0 V

IB = 0 mA

IC = 0 mA

IC = 1.4 A

DYNAMIC

Symbol

Test Conditions

POUT

GP *

IMD *

ηC *

COB

f = 30 MHz

POUT = 75 W PEP

POUT = 75 W PEP

POUT = 75 W PEP

f = 1 MHz

Note: * f1 = 30.00 MHz, f2 = 30.01 MHz

VCE = 50 V

VCE = 50 V

VCE = 50 V

VCE = 50 V

VCB = 50 V

MS1006

Min.

Value

Typ.

Max.

Units

110

V

55

V

4.0

V

19

50

Min.

Value

Typ.

Max.

Units

75

W

14

dB

-30

dBc

37

%

100

PF

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

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