MRF6S18140HR3 Просмотр технического описания (PDF) - Freescale Semiconductor

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MRF6S18140HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

0

1

1.1

Date

Sept. 2006

Dec. 2008

Dec. 2009

Description

• Initial Release of Data Sheet

• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN13232, p. 1, 2

• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality

is standard, p. 1

• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in

Functional Test”, On Characteristics table, p. 2

• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part

numbers, p. 3

• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic

range, p. 6

• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device, p. 7

• Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change

Notification number, PCN13232, p. 1, 2

• Data sheet archived. Part no longer manufactured.

RF Device Data

Freescale Semiconductor

MRF6S18140HR3 MRF6S18140HSR3

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