MRF6S18140HSR3(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

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MRF6S18140HSR3
(Rev.:2006)

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for N- CDMA base station applications with frequencies from 1805

to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,

Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB

Drain Efficiency — 27.5%

IM3 @ 2.5 MHz Offset — - 36 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — - 50.5 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Document Number: MRF6S18140H

Rev. 0, 9/2006

MRF6S18140HR3

MRF6S18140HSR3

1805 - 1880 MHz, 29 W AVG., 28 V

2 x N - CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465B - 03, STYLE 1

NI - 880

MRF6S18140HR3

CASE 465C - 02, STYLE 1

NI - 880S

MRF6S18140HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Table 2. Thermal Characteristics

Characteristic

VDSS

VGS

Tstg

TC

TJ

Symbol

- 0.5, +68

- 0.5, +12

- 65 to +150

150

225

Value (2,3)

Vdc

Vdc

°C

°C

°C

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 73°C, 29 W CW

RθJC

0.31

0.35

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

© Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data

Freescale Semiconductor

MRF6S18140HR3 MRF6S18140HSR3

1

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