MPVZ5150(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

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MPVZ5150
(Rev.:2006)

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Freescale Semiconductor 

-A-

5

N -B-

8

S

J

K

PACKAGE DIMENSIONS

D 8 PL

4

0.25 (0.010) M T B S A S

G

1

V

C

M

W

PIN 1 IDENTIFIER

H

-T-

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION A AND B DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006).

5. ALL VERTICAL SURFACES 5˚ TYPICAL DRAFT.

INCHES

DIM MIN MAX

A 0.415 0.425

B 0.415 0.425

C 0.500 0.520

D 0.038 0.042

G 0.100 BSC

H 0.002 0.010

J 0.009 0.011

K 0.061 0.071

M 0˚

7˚

N 0.444 0.448

S 0.709 0.725

V 0.245 0.255

W 0.115 0.125

MILLIMETERS

MIN MAX

10.54 10.79

10.54 10.79

12.70 13.21

0.96 1.07

2.54 BSC

0.05 0.25

0.23 0.28

1.55 1.80

0˚

7˚

11.28 11.38

18.01 18.41

6.22 6.48

2.92 3.17

CASE 482A-01

ISSUE A

SMALL OUTLINE PACKAGE

-A-

5

N -B-

8

S

J

4

G

D 8 PL

0.25 (0.010) M T B S A S

1

DETAIL X

W

V

C

PIN 1

IDENTIFIER

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006).

5. ALL VERTICAL SURFACES 5˚ TYPICAL DRAFT.

6. DIMENSION S TO CENTER OF LEAD WHEN

FORMED PARALLEL.

INCHES MILLIMETERS

DIM MIN MAX MIN MAX

A 0.415 0.425 10.54 10.79

B 0.415 0.425 10.54 10.79

C 0.500 0.520 12.70 13.21

D 0.026 0.034 0.66 0.864

G 0.100 BSC

2.54 BSC

J 0.009 0.011 0.23 0.28

K 0.100 0.120 2.54 3.05

M 0˚

15˚ 0˚

15˚

N 0.444 0.448 11.28 11.38

S 0.540 0.560 13.72 14.22

V 0.245 0.255 6.22 6.48

W 0.115 0.125 2.92 3.17

M

DETAIL X

-T-

SEATING

PLANE

K

CASE 482C-03

ISSUE B

SMALL OUTLINE PACKAGE

MPVZ5150

6

Sensors

Freescale Semiconductor

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