MPVZ12(2006) Просмотр технического описания (PDF) - Freescale Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

MPVZ12
(Rev.:2006)

10 kPa Uncompensated Silicon Pressure Sensors

Freescale Semiconductor 

3 +VS

Sensing

Element

2

+VOUT

4

–VOUT

1

GND

Figure 1. Uncompensated Pressure Sensor Schematic

VOLTAGE OUTPUT VERSUS APPLIED DIFFERENTIAL PRESSURE

The output voltage of the differential or gauge sensor

increases with increasing pressure applied to the pressure

side (P1) relative to the vacuum side (P2). Similarly, output

voltage increases as increasing vacuum is applied to the

vacuum side (P2) relative to the pressure side (P1).

Table 1. Maximum Ratings(1)

Rating

Symbol

Value

Unit

Maximum Pressure (P1 > P2)

Burst Pressure (P1 > P2)

Storage Temperature

Operating Temperature

PMAX

75

kPa

PBURST

100

kPa

TSTG

–40 to +125

°C

TA

–40 to +125

°C

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

MPVZ12

2

Sensors

Freescale Semiconductor

Share Link: