PJ2N3904CT Просмотр технического описания (PDF) - Promax Johnton

Номер в каталоге

Компоненты Описание

Список матч

PJ2N3904CT

NPN Epitaxial Silicon Transistor

Promax Johnton 

GENERAL PURPO SE TRANSISTO R

• Collector-Emitter Voltage: VCEO = 40V

• Collector Dissipation: PC (max) = 625 mW

PJ2N3904

NPN Epitaxial Silicon Transistor

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

T stg

Rating

60

40

6

200

625

150

-55~150

Unit

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta = 25℃)

P in : 1. Emitter

2. Base

3. Collector

P in : 1. Base

2. Emitter

3. Collector

ORDERING INFORMATION

Device

PJ2N3904CT

PJ2N3904CX

Operating Temperature

-20℃～+85℃

Package

T O-92

SOT -23

C h aracte ri s ti c

Collector-Base Breakdown Voltage

*Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Curent

Base Cut-off Current

*DC Current Gain

S y m bo l

BVCBO

BVCEO

BVEBO

ICEX

IBL

hFE

*Collector-Emitter Saturation Voltage

VCE(sat)

*Base-Emitter Saturation Voltage

VBE(sat)

Output Capacitance

Cob

Current Gain Bandwidth Produce

fT

Turn On Time

ton

T urn Off T ime

toff

*Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2%

Te st Conditions

IC= 10μA , IE=0

IC= 1mA , IB=0

IE=10μA , IC=0

VCE= 30V , VBE = 3V

VCE= 30V , VBE = 3V

Ic =0.1mA, VCE =1V

Ic =1mA, VCE =1V

Ic=10mA; VCE =1V

Ic =50 mA, VCE =1V

Ic =100 mA, VCE =1V

IC= 10 mA , IB=1mA

IC= 50mA , IB=5mA

IC= 10 mA , IB=1mA

IC= 50mA , IB=5mA

VCB =5V, IE =0

f=1MHz

Ic =10 mA, VCE =20V

f=100MHz

Vcc =3 V, VBE =0.5V

Ic =10 mA, IB1 =1mA

Vcc =3V, Ic =1mA

IB1=IB2=1 mA

Min Typ Max Unit

60

V

40

V

6

V

50

nA

50

nA

40

70

100

300

60

30

0.2

V

0.3

V

0.65

0.85

V

0.95

V

4

pF

300

MHz

70

ns

250

ns

1-3

2002/01.rev.A

Share Link: