MMBT4403WT1G(2005) Просмотр технического описания (PDF) - ON Semiconductor

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MMBT4403WT1G
(Rev.:2005)

Switching Transistor PNP Silicon

ON Semiconductor 

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

VCE = 1.0 V

VCE = 10 V

MMBT4403WT1

STATIC CHARACTERISTICS

TJ = 125°C

25°C

−55 °C

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 14. DC Current Gain

50 70 100

200 300 500

1.0

0.8

0.6

IC = 1.0 mA

0.4

10 mA

100 mA

500 mA

0.2

0

0.005 0.01 0.02 0.03 0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20 30

50

IB, BASE CURRENT (mA)

Figure 15. Collector Saturation Region

1.0

TJ = 25°C

0.8

0.6

0.4

VBE(sat) @ IC/IB = 10

VBE(sat) @ VCE = 10 V

0.2

VCE(sat) @ IC/IB = 10

0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 16. “On” Voltages

0.5

0

qVC for VCE(sat)

0.5

1.0

1.5

2.0

qVS for VBE

2.5

0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 17. Temperature Coefficients

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