MMBT4403WT1G(2005) Просмотр технического описания (PDF) - ON Semiconductor
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MMBT4403WT1G Datasheet PDF : 6 Pages
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MMBT4403WT1
30
20
10
7.0
5.0
2.0
0.1
TRANSIENT CHARACTERISTICS
25°C
100°C
10
7.0
5.0
Ceb
3.0
2.0
VCC = 30 V
IC/IB = 10
1.0
0.7
Ccb
0.5
0.3
0.2
QT
QA
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30
0.1
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
100
70
IC/IB = 10
70
50
50
tr @ VCC = 30 V
30
tr @ VCC = 10 V
30
td @ VBE(off) = 2 V
20
td @ VBE(off) = 0
20
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
100
70
50
30
20
10
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts′ = ts − 1/8 tf
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
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