MMBT6428LT1G(2017) Просмотр технического описания (PDF) - ON Semiconductor
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MMBT6428LT1G Datasheet PDF : 5 Pages
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MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
MMBT6428
MMBT6429 / NSVMMBT6429
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
MMBT6428
MMBT6429 / NSVMMBT6429
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
Symbol
V(BR)CEO
V(BR)CBO
ICES
ICBO
IEBO
hFE
Min
Max
Unit
Vdc
50
−
45
−
Vdc
60
−
55
−
mAdc
−
0.1
mAdc
−
0.01
mAdc
−
0.01
−
250
−
500
−
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
650
500 1250
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
−
500
−
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429 / NSVMMBT6429
250
−
500
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VCE(sat)
VBE(on)
Vdc
−
0.2
−
0.6
Vdc
0.56 0.66
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
MHz
100
700
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
−
3.0
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
−
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
www.onsemi.com
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