¡ Semiconductor
ML9060
ELECTRICAL CHARACTERISTICS
DC Characteristics
(VDD = 2.7 to 5.5V, VLCD = 4.5 to 16V, Ta = –40 to +85°C)
Parameter
Symbol Condition Min. Typ. Max. Unit Applicable pin
"H" Input voltage
VIH1 *1
0.7VDD —
VDD
DATA IN
—
V CLOCK IN
VIH2 *2
0.8VDD —
VDD
LOAD IN
"L" Input voltage
Input leakage current 1
VIL1 *1
—
GND
VIL2 *2
GND
IL1 VI = VDD or 0V
—
—
0.3VDD
SEG-TEST IN
V
— 0.2VDD
BLANK IN
M/S, D/S
—
±1.0 mA OSC1, OSC I/E
Input leakage current 2
VI = VDD or 0V
IL2 D/S = "H"
—
M/S = "L"
—
±10 mA SYNC
Segment
VOHS IO = –30mA VLCD–0.2 —
Common VOHC *3 IO = –150mA VLCD–0.2 —
—
V SEG1 to SEG160
—
V COM A, COM B
DATA OUT
CLOCK OUT
"H" Output
voltage
Logic
VOHL1 IO = –100mA 0.9VDD —
LOAD OUT
—
V SEG-TEST OUT
BLANK OUT
COM OUT
SYNC
"M" Output
voltage
Common
VOHL2 IO = –200mA
VOMC *3 IO = ±150mA
0.9VDD
1/2VLCD
–0.15
—
1/2VLCD
—
1/2VLCD
+0.15
V OSC2
V COM A, COM B
Segment
Common
VOLS IO = 30mA
VOLC *3 IO = 150mA
—
—
0.2 V SEG1 to SEG160
—
—
0.2 V COM A, COM B
DATA OUT
CLOCK OUT
"L" Output
voltage
Logic
VOLL1 IO = 100mA
LOAD OUT
—
— 0.1VDD V SEG-TEST OUT
BLANK OUT
COM OUT
SYNC
Output
resistance
Segment
Common
VOLL2
RSEG
RCOM
IO = 200mA
—
— 0.1VDD V OSC2
—
—
10 kW SEG1 to SEG160
—
—
1.5 kW COM A, COM B
"M": Middle level
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