MJ11012G Просмотр технического описания (PDF) - ON Semiconductor
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MJ11012G Datasheet PDF : 4 Pages
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MJ11015 (PNP); MJ11012, MJ11016 (NPN)
30 k
20 k
PNP MJ11015
NPN MJ11012, MJ11016
10 k
7k
5k
3k
2k
700
500
300
0.3
VCE = 5 Vdc
TJ = 25°C
0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain (1)
20 30
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
10
PNP MJ11015
NPN MJ11012, MJ11016
VCE = 3 Vdc
IC = 10 mAdc
TJ = 25°C
20 30
50 70 100 200 300 500 700 1.0 k
f, FREQUENCY (kHz)
Figure 3. Small−Signal Current Gain
5
PNP MJ11015
NPN MJ11012, MJ11016
4
TJ = 25°C
3 IC/IB = 100
2
VBE(sat)
1
VCE(sat)
0
0.1 0.2
0.5 1 2
5 10 20
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages (1)
50 100
50
20
10
5
2
1
0.5
0.2
BONDING WIRE LIMITATION
0.1
0.05
THERMAL LIMITATION @ TC = 25°C
SECOND BREAKDOWN LIMITATION
0.02
MJ11012
0.01
MJ11015, MJ11016
23
5 7 10
20 30 50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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