MG600J2YS60A Просмотр технического описания (PDF) - Toshiba

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MG600J2YS60A

TOSHIBA IGBT Module Silicon N Channel IGBT

Toshiba 

3. Module (Tc = 25°C)

Characteristics

Junction to case thermal resistance

Case to fin thermal resistance

Switching Time Test Circuit

Symbol

Rth (j-c)

Rth (c-f)

Test Condition

Inverter IGBT stage

Inverter FRD stage

With silicon compound

RG

IF

-VGE

IC

L

RG

VCC

MG600J2YS60A

Min Typ. Max Unit

¾

¾ 0.045

°C/W

¾

¾ 0.068

¾ 0.013 ¾ °C/W

Timing Chart

VGE

10%

90%

90% Irr

Irr

20% Irr

IC

trr

90%

10%

td (on)

10%

td (off) tf

4

2002-09-06

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