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MG600Q1US61 Просмотр технического описания (PDF) - Toshiba
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Компоненты Описание
Список матч
MG600Q1US61
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba
MG600Q1US61 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
600
Common cathode
VGE
=
0
500
I
F
– V
F
400
Tj
=
25°C
300
200
125
100
-
40
0
0
0.5
1
1.5
2
2.5
3
Forward voltage V
F
(V)
MG600Q1US61
V
CE
, V
GE
– Q
G
1000
20
Common emitter
RL
=
1
W
Tj
=
25°C
800
16
400
600
600
12
200
400
8
VCE
=
0 V
200
4
0
0
0
1000
2000
3000
4000
5000
Charge Q
G
(nC)
Switching time – R
G
10000
VCC
=
600 V, IC
=
600 A
VGE
= ±
15 V
: Tj
=
25°C
: Tj
=
125°C
toff
td (off)
ton
1000
tr
td (on)
100
0
tf
5
10
15
20
25
Gate resistance R
G
(
9
)
Switching loss – R
G
1000
Eon
100
10
0
Eoff
VCC
=
600 V
IC
=
600 A
VGE
= ±
15 V
: Tj
=
25°C
: Tj
=
125°C
5
10
15
20
25
Gate resistance R
G
(
9
)
10000
Switching time – I
C
1000
toff
td (off)
100
10
0
td (on)
ton
tf
tr
VCC
=
600 V, RG
=
2
W
VGE
= ±
15 V, Ls
=
100 nH
: Tj
=
25°C
: Tj
=
125°C
100
200
300
400
500
600
Collector current I
C
(A)
Switching loss – I
C
1000
100
Eoff
Eon
10
VCC
=
600 V, RG
=
2
W
VGE
= ±
15 V, Ls
=
100 nH
: Tj
=
25°C
: Tj
=
125°C
1
0
100
200
300
400
500
600
Collector current I
C
(A)
5
2002-10-04
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