MG100Q2YS51 Просмотр технического описания (PDF) - Toshiba
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MG100Q2YS51 Datasheet PDF : 7 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q2YS51
MG100Q2YS51
High Power Switching Applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.3µs (Max)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
Collector current
DC
IC
(25°C / 80°C)
150 / 100
A
1ms
ICP
(25°C / 80°C)
300 / 200
DC
Forward current
IF
100
A
1ms
IFM
200
Collector power dissipation
(Tc = 25°C)
PC
660
W
Junction temperature
Storage temperature range
Isolation voltage
Tj
Tstg
VIsol
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3/3
N·m
―
―
2-109C4A
1
2001-04-16
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