DC OPERATING CONDITIONS AND CHARACTERISTICS
(3.6 V ≥ VDD ≥ 3.1 V, TJ = 20 to + 110°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
* VIL ≥ – 2.0 V for t ≤ tKHKH/2.
VDD
3.135
3.3
VIH
1.7
—
VIL
– 0.3*
—
VIH
Max
Unit
3.6
V
VDD + 0.3
V
0.7
V
VSS
VSS – 1.0 V
20% tKHKH (MIN)
Figure 1. Undershoot Voltage
DC CHARACTERISTICS
Parameter
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Output Leakage Current (0 V ≤ Vin ≤ VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Min
Ilkg(I)
—
Ilkg(O)
—
VOL
—
VOH
2.4
POWER SUPPLY CURRENTS
Parameter
Symbol
Min
AC Supply Current (Device Selected, All Outputs Open,
MCM72F10DG8
IDDA
—
Cycle Time ≥ tKHKH min)
MCM72F10DG9
MCM72F10DG12
CMOS Standby Supply Current (Deselected, Clock (K) Cycle Time ≥ tKHKH
ISB1
—
Clock Running Supply Current (Deselected, Clock (K) Cycle Time ≥ tKHKH,
ISB2
—
All Other Inputs Held to Static CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TJ = 20 to 110 °C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Input Capacitance
Address, ADSP
Cin
74
E, G
42
Other Inputs
26
I/O Capacitance
CI/O
38
MASS (Periodically Sampled Rather Than 100% Tested)
Parameter
Mass
Max
Unit
± 1.0
µA
± 1.0
µA
0.4
V
—
V
Max
Unit
3580
mA
3480
3380
3040
mA
1360
mA
Max
Unit
90
pF
50
30
42
pF
Max
Unit
36
g
MCM72F10
6
MOTOROLA FAST SRAM