TGP6336-EEU Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGP6336-EEU

6 - 18 GHz Phase Shifter

TriQuint Semiconductor 

Product Data Sheet

TGP6336-EEU

RF CHARACTERISTICS

PARAMETER

IL

Insertion loss (all states)

SWR(in) Input standing w ave ratio

SWR(out) Output standing w ave ratio

P1dB(in) Input pow er at 1–dB gain compression

TEST CONDITIONS

TYP UNIT

f = 6 - 18 GHz

9

dB

f = 6 - 18 GHz (all states) 2.0:1

-

f = 6 - 18 GHz (all states) 2.6:1

-

see next table

PHASE

SHIFT

(degrees)

-11.25

-22.5

-45

-90

-180

-348.75

TYPICAL RELATIVE PHASE SHIFT

at 6GHz

(degrees)

at 12GHz

(degrees)

at 18GHz

(degrees)

-13±2

-13.5±2

13±4

-23±2

-55±4

-107±5

-214±4

-416±8

-23±2

-43±3

-84±7

-165±8

-326±9

32±4

58±7

99±8

186±16

380±11

TYPICAL INPUT POWER at

1–dB GAIN COMPRESSION at

MIDBAND(dBm)

26

27

26

25

25

25

V+ = 6 V, V- = -5 V, TA = 25oC

RECOMMENDED BIAS

NETWORK

All bias resistors have a nominal value of 25-Ohms.

RF connections: Bond one 1-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and

RF Output for optimum RF performance.

Close placement of external components is essential for resonant-free performance.

Refer to TriQuint’s Gallium Arsenide Products Designers’ Information on our website under Application

Information.

TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

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