MC74LCX86(2012) Просмотр технического описания (PDF) - ON Semiconductor

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MC74LCX86
(Rev.:2012)

Low-Voltage CMOS Quad 2-Input XOR Gate

ON Semiconductor 

MC74LCX86

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25C

Min Typ Max

Units

VOLP

Dynamic LOW Peak Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

0.8

V

VOLV

Dynamic LOW Valley Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

0.8

V

4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

CIN

COUT

CPD

Input Capacitance

Output Capacitance

Power Dissipation Capacitance

Condition

VCC = 3.3 V, VI = 0 V or VCC

VCC = 3.3 V, VI = 0 V or VCC

10 MHz, VCC = 3.3 V, VI = 0 V or VCC

Typical

7

8

25

Units

pF

pF

pF

ORDERING INFORMATION

Device

Package

Shipping†

MC74LCX86DR2G

SOIC−14

(Pb−Free)

2500 Tape & Reel

MC74LCX86DTR2G

TSSOP−14

(Pb−Free)

2500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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