MC74HC365ANG Просмотр технического описания (PDF) - ON Semiconductor
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MC74HC365ANG Datasheet PDF : 8 Pages
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MC74HC365A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
VCC
Test Conditions
V
VOL
Maximum Low−Level Output
Vin = VIL
2.0
Voltage
|Iout| v 20 μA
4.5
6.0
Vin = VIL
|Iout| v 3.6 mA 3.0
|Iout| v 6.0 mA 4.5
|Iout| v 7.8 mA 6.0
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
IOZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
6.0
Vin = VIL or VIH
Vout = VCC or GND
ICC
Maximum Quiescent Supply
Vin = VCC or GND
6.0
Current (per Package)
Iout = 0 μA
Guaranteed Limit
– 55 to
25_C v 85_C v 125_C Unit
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
0.1
0.1
0.26
0.33
0.40
0.26
0.33
0.40
0.26
0.33
0.40
± 0.1
± 1.0
± 1.0
μA
± 0.5
± 5.0
± 10
μA
4
40
160
μA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
tPLH,
tPHL
Parameter
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
Cin
Maximum Input Capacitance
Cout
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Guaranteed Limit
VCC
– 55 to
V
25_C v 85_C v 125_C Unit
2.0
120
150
180
ns
3.0
60
75
90
4.5
24
30
36
6.0
20
26
31
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
60
75
90
ns
3.0
22
28
34
4.5
12
15
18
6.0
10
13
15
—
10
10
10
pF
—
15
15
15
pF
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
60
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC.
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