74HC05A Просмотр технического описания (PDF) - ON Semiconductor
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74HC05A Datasheet PDF : 7 Pages
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MC74HC05A
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V −55 to 25°C ≤85°C ≤125°C Unit
VIH
Minimum High−Level Input Voltage Vout = 0.1V or VCC −0.1V
|Iout| ≤ 20mA
2.0
1.50
1.50 1.50
V
4.5
3.15
3.15 3.15
6.0
4.20
4.20 4.20
VIL
Maximum Low−Level Input Voltage Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
2.0
0.50
0.50 0.50
V
4.5
1.35
1.35 1.35
6.0
1.80
1.80 1.80
VOL
Maximum Low−Level Output
Voltage
Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
2.0
0.1
4.5
0.1
6.0
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout| ≤ 4.0mA 4.5
|Iout| ≤ 5.2mA 6.0
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
ICC
Maximum Quiescent Supply
Vin = VCC or GND
6.0
Current (per Package)
Iout = 0mA
IOZ
Maximum Three−State Leakage
Current
Output in High−Impedance State 6.0
Vin = VIL or VIH
Vout = VCC or GND
0.26
0.26
±0.1
1.0
±0.5
0.33 0.40
0.33 0.40
±1.0
±1.0
mA
10
40
mA
±5.0
±10
mA
AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)
Symbol
tPLZ,
tPZL
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
Cin
Maximum Input Capacitance
Cout
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Guaranteed Limit
VCC
V −55 to 25°C ≤85°C ≤125°C Unit
2.0
90
4.5
18
6.0
15
115
135
ns
23
27
20
23
2.0
75
4.5
15
6.0
13
95
110
ns
19
22
16
19
10
10
10
pF
10
10
10
pF
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
4.0
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC.
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