MC33468 Просмотр технического описания (PDF) - ON Semiconductor
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MC33468 Datasheet PDF : 8 Pages
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MC33468
Figure 6. Typical 2.0 V Application with MOSFET
VOUT
VDD
VIN
VOUT
EXT
GND
If input voltage is high enough, higher efficiency may be
obtained by using a MOSFET as the switch transistor, in
which no gate resistor or capacitor is needed.
MOSFET and BJT voltage rating (VDS and VCE) should
be high enough to allow for spikes in voltage.
Figure 7. Typical Application for Output Voltages Over 2.0 V
L1
D1
VOUT
VIN
Q1
VDD
VOUT
EXT
GND
R1
(2.0 V)
R2
COUT
Inductor (L1)
Diode (D1)
Capacitor (COUT)
Transistor (Q1)
Resistor (R1)
Resistor (R2)
When choosing the output capacitor, ensure that the
capacitor voltage is higher than Vout. Select an inductor with
low DC resistance and high saturation. A Schottky diode is
recommended for a lower voltage drop and faster switching.
CD54 (15 mH)
MBRD540T1
47 mF (Tantalum type)
MMFT3055VL
150 kW
10 kW
Use external resistors that are much smaller resistance than
the resistance internal to the IC (minimum of 2 MW). When
R1 is much less than the internal resistance, the error is
minimized.
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